Product Summary

Switching Regulator Applications


? Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.)
? High forward transfer admittance: ?Yfs? = 7.0 S (typ.)
? Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
? Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Parametrics

http://pdf1.alldatasheet.com/datasheet-pdf/view/213565/TOSHIBA/2SK3878.html

Features

http://pdf1.alldatasheet.com/datasheet-pdf/view/213565/TOSHIBA/2SK3878.html

Diagrams

http://pdf1.alldatasheet.com/datasheet-pdf/view/213565/TOSHIBA/2SK3878.html

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2SK3878(F)
2SK3878(F)

MOSFET N-CH 900V 9A TO-3PN
Data Sheet
0-100: $1.73
2SK3878(F,T)
2SK3878(F,T)
Toshiba
MOSFET N-Ch FET RDS 1.0 Ohm IDSS 100uA VDS 720V
Data Sheet
0-1: $3.29
1-10: $2.77
10-100: $2.37
100-250: $2.24